357391

Silicon carbide

−400 mesh particle size, ≥97.5%

• 동의어(들): Carbon silicide, Carborundum, Methanidylidynesilanylium, Silicon monocarbide
• Linear Formula: SiC
• CAS Number: 409-21-2
• Molecular Weight: 40.10
• EC Number: 206-991-8
• MDL number: MFCD00049531
• UNSPSC 코드: 12352300
• PubChem Substance ID: 24861911
• NACRES: NA.23

속성

• 설명: hexagonal phase
• Quality Level: 100
• 분석: ≥97.5%
• 양식: powder
• 입자 크기: −400 mesh
• mp: 2700 °C (lit.)
• density: 3.22 g/mL at 25 °C (lit.)
• SMILES string: [C-]#[Si+]
• InChI: 1S/CSi/c1-2
• InChI key: HBMJWWWQQXIZIP-UHFFFAOYSA-N

설명

일반 설명

Silicon carbide (SiC) is a semiconducting material with closed packed stacking of double layers of silicon and carbon. It has excellent thermo-mechanical and electrical properties that make it useful in a variety of electronic and optoelectronic applications.

애플리케이션

SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices (light emitting diodes (LEDs), UV detectors), high temperature electronics (nuclear electronics), and high frequency devices.

안전성 정보

• Storage Class Code: 11 - Combustible Solids
• WGK: nwg
• Flash Point (°F): Not applicable
• Flash Point (°C): Not applicable
• 개인 보호 장비: dust mask type N95 (US), Eyeshields, Gloves