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647535

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

Synonym(s):

Silicon element

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About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
EC Number:
231-130-8
MDL number:
MFCD00085311
UNSPSC Code:
12352300
PubChem Substance ID:
24883543
NACRES:
NA.23
Pricing and availability is not currently available.

form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Quality Level

100

does not contain

dopant

diam. × thickness

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

semiconductor properties

<100>, N-type

SMILES string

[Si]

InChI

1S/Si

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SYNPLE-R001

Reagent-cartridge Reductive Amination

Quality Level

100

Quality Level

100

Quality Level

100

Quality Level

100

parameter

up to 0.5 mmol scale

parameter

up to 0.5 mmol scale

parameter

up to 1.2 mmol scale

parameter

up to 0.5 mmol scale

Application

Silicon wafers are majorly used in electronics as substrate materials. They are also used in a variety of applications like solar cells, microelectronics, and other integrated circuits.[1][2][3]

Physical properties

0 vortex defects. Etch pitch density (EPD) <100 cm-2. Resistivity 1,000- 2,300 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Storage Class

13 - Non Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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    Certificates of Analysis (COA)

    Lot/Batch Number
    MKCR0472
    MKCQ0514
    MKCN5974
    MKCH2379
    MKCG5810

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    24.7% record efficiency HIT solar cell on thin silicon wafer
    Taguchi M, et al.
    IEEE journal of Photovoltaics, 4(1), 96-99 (2013)
    Jaewoo Lee et al.
    Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
    A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
    Seungil Park et al.
    Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
    We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
    Jae Cheol Shin et al.
    Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
    We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
    Mariya Nazish Memon et al.
    JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
    To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
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