339202
Niobium(V) ethoxide
99.95% trace metals basis
동의어(들):
NbOEt, Niobium ethanolate, Niobium ethylate, Niobium pentaethoxide, Pentaethoxyniobium
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모든 사진(3)
About This Item
Linear Formula:
Nb(OCH2CH3)5
CAS Number:
Molecular Weight:
318.21
Beilstein:
3678883
EC Number:
MDL number:
UNSPSC 코드:
12352103
PubChem Substance ID:
NACRES:
NA.23
추천 제품
Quality Level
분석
99.95% trace metals basis
양식
liquid
반응 적합성
core: niobium
refractive index
n20/D 1.516 (lit.)
bp
142 °C/0.1 mmHg (lit.)
mp
5-6 °C (lit.)
density
1.268 g/mL at 25 °C (lit.)
SMILES string
CCO[Nb](OCC)(OCC)(OCC)OCC
InChI
1S/5C2H5O.Nb/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5
InChI key
ZTILUDNICMILKJ-UHFFFAOYSA-N
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일반 설명
Niobium(V) ethoxide is a metal-organic compound that dimerizes in solution to form Nb2(OEt)10 molecules. At room temperature, it is a colorless liquid that is miscible with some organic solvents, but which hydrolyzes readily. Niobium(V) ethoxide freezes at 5 °C and boils at 142 °C at 0.1 mmHg. It can be synthesized by the electrochemical reaction of ethanol with niobium plate and stainless-steel electrodes in the presence of tetraethylammonium chloride (TEAC) as the conductive additive.
애플리케이션
Niobium(V) ethoxide is a synthetic precursor for niobium oxides, for example Nb2O5 , NaNbO3 , andTiNb2O7. Niobium(V) ethoxide is commonly used in colloidal solution-based syntheses like sol-gel processing and electrospinning. These chemistries allow researchers to control the microstructure to form gels , nanofibers , nanotubes , and microspheres. Niobium(V) ethoxide is also commonly added to other metal alkoxides to dope metal oxides, most commonly titania, with niobium.
Because of its low boiling point and low decomposition temperature (~325-350 °C),niobium(V) ethoxide is also used as a precursor in atomic-layer deposition, chemical vapor deposition, and metal-organic chemical vapor deposition of niobium oxides.
It can also be used as a dopant to prepare Nb-doped TiO2 photoanode for dye-sensitized solar cells (DSSC). The doping of Nb lowers the conduction band of TiO2 enhancing electron injection and transfer ability of TiO2 photoanode. This results in a significant increase in the performance of DSSC.
Because of its low boiling point and low decomposition temperature (~325-350 °C),niobium(V) ethoxide is also used as a precursor in atomic-layer deposition, chemical vapor deposition, and metal-organic chemical vapor deposition of niobium oxides.
It can also be used as a dopant to prepare Nb-doped TiO2 photoanode for dye-sensitized solar cells (DSSC). The doping of Nb lowers the conduction band of TiO2 enhancing electron injection and transfer ability of TiO2 photoanode. This results in a significant increase in the performance of DSSC.
특징 및 장점
The purity and volatility of Niobium(V) ethoxide makeit a suitable precursor for atomic layer deposition and chemical vapordeposition of niobium oxide.
신호어
Warning
유해 및 위험 성명서
Hazard Classifications
Flam. Liq. 3
Storage Class Code
3 - Flammable liquids
WGK
WGK 3
Flash Point (°F)
96.8 °F - closed cup
Flash Point (°C)
36 °C - closed cup
개인 보호 장비
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
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